1994. 12. 23 1/2 semiconductor technical data KTD686 epitaxial planar npn transistor revision no : 0 switching application. hammer driver, pulse motor drive application. feature high dc current gain : h fe =2000(min.) (v ce =2v, i c =1a). maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector (heat sink) 3. emitter to-220ab 10.30 max 15.30 max 0.80 3.60 0.20 3.00 6.70 max 13.60 0.50 5.60 max 0.50 1.50 max 2.54 4.70 max 2.60 a b c d e f g h j k l m n o p a e mm 123 f b g h l c k j o n p d 1.37 max 1.50 max r s q c t q1.50 r 9.50 0.20 s 8.00 0.20 t 2.90 max + _ + _ + _ + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 80 v emitter-base voltage v eb0 5 v continuous collector current i c 4 a collector power dissipation (tc=25 1 ) p c 30 w junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =100v, i e =0 - - 20 a emitter cut-off current i ebo v eb =5v, i c =0 - - 2.5 ma collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 80 - - v dc current gain h fe (1) v ce =2v, i c =1a 2000 - - h fe (2) v ce =2v, i c =3a 1000 - - saturation voltage collector-emitter v ce(sat) i c =3a, i b =6ma - - 1.5 v base-emitter v be(sat) i c =3a, i b =6ma - - 2.0 switching time turn-on time t on 10 ? cc v =30v duty cycle 1% i b2 b2 i =-i =6ma b1 b2 i i b1 20 sec b1 i input output 0 - 0.2 - s storage time t stg - 1.5 - fall time t f - 0.6 - 4.5k ? base collecto r emitter 300 ? ~ _ ~ _ equivalent circuit
1994. 12. 23 2/2 KTD686 revision no : 0 collector power dissipation p (w) 0 c 0 ambient temperature ta ( c) pc - ta collector current i (a) c 1 collector-emitter voltage v (v) ce safe operating area collector-emitter saturation 0.3 ce(sat) 0.2 collector current i (a) c v - i i - v cce ce collector-emitter voltage v (v) 0 c 0 collector current i (a) h - i c collector current i (a) 0.1 fe 300 dc current gain h collector current i (a) 0 c 0 collector-emitter voltage v (v) ce ce c i - v 12345 1 2 3 4 common emitter tc=25 c 500 450 400 350 300 250 0 i =200 a b 12345 1 2 3 4 common emitter tc=-55 c 800 700 600 500 0 b i =400 a ce(sat) c voltage v (v) 0.3 0.5 1 3 5 0.5 1 2 3 common emitter i /i =500 c b tc=-55 c tc=25 c tc=100 c fe c 0.3 0.5 1 3 5 10 500 1k 3k 5k 10k common emitter v =2v ce tc=100 c t c=25 c tc =- 55 c 25 50 75 100 125 150 175 4 8 12 16 20 24 28 32 tc=ta infinite heat sink 300 x 300 x 2mm al (heat sink) 100 x 100 x 2mm al (heat sink) 50 x 50 x 2mm al (heat sink) no heat sink 1 2 3 4 5 1 2 3 4 5 3 5 10 30 50 100 0.05 0.1 0.3 0.5 1 3 5 10 single norepetitive pulse tc=25 c curves must be derated linearly with increase in temperature * i max(pulsed) c * c i max (continuous) 1ms * * 10ms * 100ms dc oper a t i on tc= 25 c
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